Analysis of Threshold Voltage Shifts in Double Gate Tunnel FinFETs: Effects of Improved Electrostatics by Gate Dielectrics and Back Gate Effects

摘要

We analyzed the threshold voltage (Vth) shift due to EOT scaling in double gate (DG) tunnel FinFETs (tFinFETs). It is found that V_(th) in tFinFETs has high sensitivity of EOT, which is quite different as compared with MOSFETs. We proposed a simple model which is indispensable to design the tFinFETs structure for the first time. In order to correct the V_(th) modulation due to EOT scaling in tFinFETs, we studied the back gate effect in independent-DG tFinFETs and revealed that the back bias is effective as is the case in the MOSFETs.