Currents, surface potentials, and defect generation in 1.2-1.5 nm oxide MOSFETs

摘要

Summary form only given. Oxide insulator thickness and its ability to control the carrier flow along a surface channel with low power dissipation and high endurance is central to the scaling of the MOSFET to sub-50 nm dimensions. This paper summarizes results on transport and electrostatics at the few monolayer limit for silicon dioxide