Characteristic Enhancement of InGaN-Based Light Emitting Diodes Grown on Pattern Sapphire Substrates

摘要

Blue light-emitting diodes (LEDs) with an InGaN multi-quantum well (MQW) structure were fabricated on cone-shaped patterned sapphire substrate (PSS) using a single growth process of metal organic chemical vapor deposition (MOCVD). The PSS was proved to be an efficient method to decrease the threading dislocation (TD) density in GaN epifilm with the lateral growth mode on PSS. The LED designed on PSS increased the electroluminescene (EL) intensity. The internal quantum efficiency is increased by reducing the dislocation density, and light extraction efficiency is also enhanced owing to PSS.