Schottky-Junction TMD-Based Monomaterial Field-Effect Transistor

摘要

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted extensive interest as this class of layered materials exhibit electronic properties from semimetals to semiconductors. In addition, their properties may significantly change when moving from bulk to ultra-thin films due to strong spin-orbit coupling (SOC). These properties open up new opportunities in bandgap engineering for future electronic and photonic devices.