Crystallization of Ge Thin Films on Sapphire(0001) by Thermal Annealing

摘要

A formation of single crystalline semiconductor such as Silicon on Sapphire substrate has been intensively studied for applying the high frequency devices with low power consumption and highspeed operation. Recently, two-dimensional honeycomb crystals consisted with Si and Ge atoms so called sillicene and germanene have been attracted much attention as a post-graphene material. One of the key issues to exhibit their unique electronic properties for device application is the formation of silicone and germanene on the insulating substrate. Therefore, the purpose of this work is to get an insight into the formation of ultra-thin Ge crystal on Sapphire substrate. We have investigated an influence of thermal annealing on the surface morphology and the solid-phase-crystallization of amorphous Ge thin films formed on Sapphire(0001) substrate.