机译:退火温度和退火气氛对磁控溅射蓝宝石(0001)衬底上ZnO薄膜的结构和光学性能的影响
Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, PR China;
Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, PR China;
Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, PR China;
Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, PR China;
Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, PR China;
Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, PR China;
Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, PR China ,Center for Composite Materials, Harbin Institute of Technology, Harbin 150080, PR China;
ZnO; magnetron sputtering deposition; annealing; X-ray diffraction; photoluminescence;
机译:ZnO层和退火温度对射频磁控溅射制备的SiGe薄膜的结构,光学和膜-基底粘结性能的影响
机译:低温缓冲,射频功率和退火对射频磁控溅射生长的ZnO / Al_2O_3(0001)薄膜的结构和光学性能的影响
机译:膜厚和退火温度对通过溶胶-凝胶沉积在蓝宝石(0001)衬底上的ZnO薄膜的结构和光学性能的影响
机译:通过快速热退火通过RF磁控溅射在(0001)蓝宝石衬底上生长的Ga掺杂ZnO薄膜的光致发光和光学性质
机译:氢退火和衬底温度对射频溅射氧化锌薄膜性能的影响
机译:基材工艺条件和生长ZnO薄膜性能的底蛋白温度通过连续的离子层吸附和反应方法
机译:错误:“低温缓冲液,RF功率和退火对由RF-磁控溅射生长的ZnO / Al2O3(0001)薄膜结构和光学性质的影响”J。苹果。物理。 106,023511(2009)