Isotropic Wet Etching and Improving Surface Flatness of Ge for Etchback Ge-on-Insulator Fabrication

摘要

Ge has been received much attention as the next generation semiconductor materials due to its attractive characteristics such as high carrier mobility and narrow bandgap corresponding near infrared wavelength. In order to utilize its characteristics for the applications, Ge-on-Insulator (GOI) structure is necessary. Several fabrication methods for GOI have been suggested such as wafer bonding and mechanical thinning, Smart-Cut, and SiGe condensation. It is well known Smart-Cut is widely used for commercial Si-on-lnsulator (SOI) fabrication. However, Ge is more sensitive to damages caused by ion implantation and difficult to recover damages completely. Therefore, the best way for GOI fabrication have not been developed.