Very Low Temperature Reduced Pressure - Chemical Vapour Deposition of SiGe, Si1-yCy and Si:P Layers: Silane versus Disilane

摘要

Evaluation of disilane for the very low temperature Reduced Pressure - Chemical Vapour Deposition of SiGe, Si1-yCy and Si:P layers. Quantification of the catalysis effect of GeH4 on the HCl etch rate of Si. The target is to fabricate Si:P and SiC:P raised sources and drains on each side of short gate lenght n-type FD-SOI MOSFETs (thanks to Cyclic Deposition / Etch processes), in order to boost electrical performances.