Band-Edge Electronic States, and Pre-Existing Defects in Remote Plasma Deposited (RPD) GeO2 and SiO2

摘要

Two issues are addressed: (i) X-ray spectroscopic studies of RPD-SiO2 and RPD GeO2, include band edge states and pre-existing defects, each in the OK edge spectrum, and (ii) interpretation of these X-ray absorption spectroscopy to identify band edge states and intrinsic defects. (iii) These provide a basis for interpretation of electrical data associated with band edge electrically active singlet state defects.