Recently, tunnel Field Effect Transistor (TFET) has attracted lots of attention for the low power application since its potential to obtain a steeper subthreshold slope (SS) than conventional MOSFET. So far, only a few one- and two-dimensional (2D) analytical models [1-2] have been reported. However, among these models, the influence of substrate electric field is not included, and the band-to-band tunneling (BTBT) cannot be simplified to be a 1D physical picture. In this work, we present a 2D analytical model of TFET taking into consideration the nonlocal electric field and energy band profile. Based on this model, a hetero strained germanium/strained silicon TFET (HTFET) on SOI substrates is analyzed. It is shown that the HTFET exhibits superior transfer characteristics than its counterparts.
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