Fabrication of Bonded GeOI Substrates with Thin Al2O3/SiO2 Buried Oxide Layers

摘要

Thin-body GeOI substrates with thin Al2O3/SiO2 BOX layers are successfully fabricated for the first time. It is found that the bonding interface was robust enough for Mechanical Polishing and CMP even after bonding at a room temperature in atmosphere. The GeOI surfaces etched with ozone water are atomically flat. Moreover, Dit of as low as 3.9e+11 eV-1cm-2 at the GeOI/BOX is obtained. These results suggest that negligible negative impact on carrier mobility and sub-threshold characteristics can be realized by using the GeOI substrates with thin Al2O3/SiO2 BOX layers.