CMOS Schottky diodes for photo-detector and thermal-detector applications

摘要

CMOS fabricated Schotty diodes for photo-detector and temperature sensor applications are reported. In our previous research, Schottky diodes have been designed and fabricated in standard CMOS processes. Since no work has been done on characterizing thermal or optical properties of CMOS Schottky diodes, photo detecting and temperature sensing characteristics are measured. Comparison between CMOS Schottky diodes and pn-j unction photodiodes are presented, because pn-j unction photodiodes have been mainly used as on-chip photo detectors. As a temperature sensor, Schottky diodes showed a linear region between 30degC and 80degC, which is useful for body temperature sensors.