ELECTRON-TRANSPORTING THIOPHENE-BASED SEMICONDUCTORS EXHIBITING VERY HIGH FIELD EFFECT MOBILITIES

摘要

Organic semiconductors exhibiting complementary n-type carrier mobility are the key components for the development of the field of "plastic electronics". We present here a novel series of oligothiophenes designed to improve performance and stability under electron-transpoiting conditions. Furthermore, the key structural features of these compounds allows additional modifications of the n-type conducting core to achieve material solubility and processability. Thin film transistor (TFT) devices were fabricated employing both vacuum-and solution-deposited semiconducting layers. Field-effect transistor measurements indicate that all the members of this new series are n-type semiconductors with mobilities and Ion:Ioff ratios approaching 1 cm~2/(Vs) and 107, respectively. This family represents a key milestone in the design, understanding, and development of the next generation of highly efficient n-type OTFT components.