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首页> 外文期刊>Journal of Materials Chemistry, C. materials for optical and electronic devices >Unusually high SCLC hole mobility in solution-processed thin films of a polycyclic thiophene-based small-molecule semiconductor
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Unusually high SCLC hole mobility in solution-processed thin films of a polycyclic thiophene-based small-molecule semiconductor

机译:多环噻吩基小分子半导体溶液加工薄膜中的SCLC空穴迁移率异常高

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摘要

SCLC hole mobilities up to 8.72 x 10~(-2) cm~2 V~(-1) s~(-1) amongst the highest reported hole mobility values for solution-processed small-molecule organic semiconductors, are obtained from thermally annealed device-sized thin films of a thiophene-containing polycyclic aromatic hydrocarbon.
机译:通过热退火获得的固溶处理小分子有机半导体的最高空穴迁移率值中,SCLC空穴迁移率高达8.72 x 10〜(-2)cm〜2 V〜(-1)s〜(-1)器件尺寸的含噻吩多环芳烃薄膜。

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