Incorporation of Er into GaN by in situ doping during halide vapor-phase epitaxy

摘要

The incorporation of Er into GaN by in-situ doping during halide vapor phase epitaxy has been investigated. The NH_3, HCl, metallic Ga and Er were used as source as source materials, while N_2 was employed as a carrier gas. The GaN:Er films were obtained at different Ga/Er source temperaures. The SIMS analysis shows that the steady state Er doping concentration can be as high as 2x10~(18) cm~(-3). All in-situ Er-doped samples luminescence at 1.54 #mu#m due to the ~4I_(13/2) -> ~4I_(15/2) transition of Er~(3+) at both low (11K) and room temeprature. The higher the Ga/Er boat temeprature, the stronger the 1.54 #mu#m luminescence, implying a higher incorporation rate of Er into the GaN. The ~4I_(11/2) -> ~4I_(15/2) transition luminescence, centered around 980 nm, can also be detected at both low and room temeprature. The broad-spectrum PL measurements exhibited sharp bandedge luminescence without the presence of the yellow luminescence band.