~119Sn Moessbauer spectroscopy investigation of heavily P-doped silicon

摘要

Utilzing radioactive ~119m~Sn probe atoms in isoconcentration P-doped silicon, by~119Sn Moessbauer emission spectroscopy the formation of probe atom-vacancy complexs is observed as a function of rapid thermal annealing temeprature and doping level. The results are discussed within the framework of a previously proposed model.