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Hard Mold UV Nanoimprint Lithography Process

机译:硬模UV纳米压印光刻工艺

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摘要

Low temperature and low pressure nano-pattern fabrication process is presented. Hard mold UV nanoimprint lithography, processed by SUSS MicroTec MA6,was used for sub-100nm pattern fabrication. The process details including mold fabrication are provided. A comparison between patterns on soft mold and hard mold is given. The governing parameters in hard mold NIL process are identified. UV curable resin AMONIL MMS4 was used as a UV-curable photo resist (PR) in the process, while 4inch Si wafer was the imprinted substrate. Various resist coating thicknesses from 200nm to 500nm were tested. Imprint force was applied by the high pressure N_2 gas, in order to get uniform force distribution over the whole imprint area. 88nm width line patterns were transferred successfully to the resin layer. Results evaluation was done by using AFM and SEM pictures. Image from optical microscope is also shown for reference.
机译:提出了低温和低压纳米图案制造工艺。 由Suss MicroTec MA6加工的硬模UV纳米压印光刻用于亚100nm图案制造。 提供包括模具制造的过程细节。 给出了软模和硬模的图案之间的比较。 确定了硬模NIL过程中的控制参数。 UV可固化树脂Amonil MMS4在该过程中用作UV可固化的光致抗蚀剂(PR),而4INCH Si晶片是压印的基材。 测试了从200nm至500nm的各种抗蚀剂涂层厚度。 通过高压N_2气体施加压痕力,以便在整个压印区域上获得均匀的力分布。 将88nm宽度线图案成功转移到树脂层中。 结果评估是通过使用AFM和SEM图片进行的。 还显示了来自光学显微镜的图像以供参考。

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