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Silicon carbide pressure sensor for high temperature and high pressure applications: Influence of substrate material on performance

机译:用于高温高压应用的碳化硅压力传感器:基板材料对性能的影响

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We have studied the effect of substrate material related to thermal mismatch for silicon carbide (SiC) diaphragm-based capacitive pressure sensors. Two sets of devices, with identical dimensions and fabrication processes were made on poly-SiC and Si substrates. Designed for a maximum pressure of 4.83 MPa (700 psi), these devices were operated in small-deflection mode and tested at room temperature and 500oC. At room temperature, the SiC- and Si-substrate devices showed sensitivities of 6.5E-04 and 6.1E-04 fF/Pa, nonlinearities of 5.0% and 3.9%, and resolutions of 0.2% and 0.3%, respectively. At 500oC, the SiC- and Si-substrate devices showed sensitivities of 1.2E-02 and 1.1E-02 fF/Pa, nonlinearities of 2.6% and 3.8%, and resolutions of 0.5% and 1.8%, respectively. For the chosen design parameters, the results show little influence of substrate material on sensor performance.
机译:我们研究了基于碳化硅(SiC)膜片基电容式压力传感器的热失配相关的基底材料的效果。 在多SiC和Si基板上制作两组装置,具有相同的尺寸和制造工艺。 设计为最大压力为4.83MPa(700psi),这些器件以小偏转模式运行并在室温和500℃下进行测试。 在室温下,SiC和Si衬底装置显示6.5E-04和6.1E-04 FF / PA,非线性的敏感性为5.0%和3.9%,分别分辨率为0.2%和0.3%。 在500oC时,SiC和Si衬底装置显示出1.2E-02和1.1E-02 FF / PA,非线性的敏感性,非线性为2.6%和3.8%,分别分辨率为0.5%和1.8%。 对于所选的设计参数,结果对基板材料对传感器性能的影响很小。

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