Surface Preparation Challenge on Nitrided Gate oxides

摘要

Gate oxide plasma nitridation is required to achieve C065 performing devices. In order to get robust manufacturability these gate oxides must get a well determined nitrogen in depth profile. Moreover, after the growth of these oxides a special care of further oxidations is needed to guarantee an accurate process control. SPM has especially a high oxidizing power. Therefore stripping and photo reworks contribution need to be limited as much as possible.