Analysis of Process Parameter Variation in Emerging Carbon Nanotube FETs

摘要

Silicon based semiconductor technology has gained a lot of attention in electronics industries for decades. Nowadays it has almost reached an end, further scaling may cause critical issues such as short channel effects, leakage due to tunneling, high field effects etc., which are not under the control of the designers. Carbon Nanotube is found to be a better alternative to silicon as channel in nano range FETs. In this paper the process parameters affecting the drain current of both planar and coaxial type CNTFETs are identified. The device performance matrices such as transconductance(gm), drain resistance (rd) and gain corresponding to ±5% variation of the parameters is analyzed and the device which shows better performance on scaling is identified. Coaxial CNTFET offer better performance for further scaling as it offers better gate control due to its gate all around geometry. Finally, modelled the drain current of coaxial CNTFET as a function of individual process parameter. The percentage variation of the modelled and simulated results are calculated, and it is found to be less than ± 1%. This model can be useful in predicting drain current of the device for different process parameters during the fabrication process.