Carrier Mobility as a Function of Temperature in as-Grown and H-intercalated Epitaxial Graphenes on 4H-SiC

摘要

The carrier velocity is measured as a function of electric field in as-grown and H-intercalaed epitaxial graphene grown on semi-insulating 4H-SiC in order to estimate the low field carrier mobility as a function of temperature. The mobility is also measured on the same samples as a function of temperature in a liquid Helium (He) cooled cryostat. The two temperature dependent measurements are compared in order to deduce the dominant carrier scattering mechanisms in both materials. In as-grown material, acoustic phonon scattering and impurity scattering both contribute, while impurity scattering dominates in H-intercalated material.