High-sensitivity High-resolution Full-wafer Imaging of the Properties of Large n-type SiC Using the Relative Reflectance of Two Terahertz Waves

摘要

THz imaging was performed in 2 s intervals with 1 mm resolution on a 3 in., 0.42 mm thick, as-cut n-type Silicon Carbide wafer. Carrier density, relaxation time, mobility, and resistivity obtained from imaging results are 0.91 × 10~(18) cm~(-3), 4.36 × 10~(-14) s, 218 cm~2V~(-1)s~(-1), and 3.14 × 10~(-2) Ωcm, respectively. Compared with the standard values provided by the manufacturers, the results suggest that THz imaging has reliable precision and accuracy.