Electrical Characterization and Microstructures of Bi3.2sEr0.75Ti3O12 and Bi2.9Er0.75Ti2.97V0.03O12 Thin Films

摘要

Bi3.25Er0.75Ti3O12(BET) and Bi3.25Er0.75Ti2.97V0.03O12(BETV) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique.These samples had polycrystalline Bi-layered perovskite structure without preferred orientation,and consisted of well developed rod-like grains with random orientation.The experimental results indicated that Er doping into Bi4Ti3O12 (BIT) also result in a remarkable improvement in ferroelectric property.The remanent polarization (Pr) and coercive field (Ec) of the BET film were 17 μC/cm2 and 80 kV/cm,respectively.Furthermore,V substitution improves the Er value of the BETV films up to 28 μC/cm2,which is much larger than that of the BET film.