Terahertz transmission properties of VO_2 thin films deposited on c- and m-plane sapphire substrates by pulsed laser deposition

摘要

Vanadium dioxide (VO_2) films were grown on c- and m-plane sapphire substrates by pulsed laser deposition (PLD) technique with VO_2 ceramic target. The VO_2 films with preferred growth orientation and uniform dense distribution have been achieved on both substrates, as confirmed by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The terahertz (THz) transmission properties of VO_2 thin films were studied by terahertz time-domain spectroscopy (THz-TDS). The results indicate that the THz transmission properties of VO_2 films are strongly influenced by the sapphire substrate orientation, suggesting that VO_2 films are ideal material candidates for THz modulation.