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METHOD FOR FORMING NITRIDE THIN FILM ON m-PLANE SAPPHIRE SUBSTRATE AND NITRIDE SEMICONDUCTOR MANUFACTURED BY THE SAME
METHOD FOR FORMING NITRIDE THIN FILM ON m-PLANE SAPPHIRE SUBSTRATE AND NITRIDE SEMICONDUCTOR MANUFACTURED BY THE SAME
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机译:在m-平面蓝宝石衬底上形成氮化物薄膜的方法和由其制造的氮化物半导体
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摘要
PURPOSE: A method for forming a nitride thin film on an m-surface sapphire substrate and the nitride semiconductor manufactured thereby are provided to increase photoluminescence intensity by epitaxially re-growing an etching surface after a heat etching process. CONSTITUTION: An M-surface sapphire substrate(10) is nitrified. A nitride thin film(32) is formed by epitaxially growing the nitrified M-surface sapphire substrate with nitride materials under a high temperature hydrogen atmosphere. The M-surface sapphire substrate is nitrified within an MOCVD(Metalorganic Chemical Vapor Deposition) chamber in an atmosphere including hydrogen gas and ammonia gas for over 5 minutes. The growth temperature for the nitrified M-surface sapphire substrate is 1030C. The nitride materials include GaN(Gallium Nitride).
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