Trench shielded gate concept for improved switching performance with the low miller capacitance

摘要

This paper presents the new gate structure concept in trench gate IGBTs in order to have extended performance in faster switching without penalties on the on-state voltage drop (Von). The combination of the trench gate and adjacent emitter-connected trench achieves the dramatic Miller capacitance reduction while maintaining the enough Injection Enhancement (IE) effect. The experimental demonstration achieved as much as 37% of reduction in the total switching loss.