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Effect of Acetic Acid Pre-Treatment on the Growth Temperature of Graphene oh Copper by Thermal Chemical Vapor Deposition

机译:乙酸预处理对石墨烯OH铜生长温度的影响通过热化学气相沉积

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Graphene is a flat monolayer of carbon atoms arranged in a honeycomb lattice.Graphene has many outstanding properties such as high electron mobility,superb strength,transparency and great flexibility.These exotic properties make graphene a promising candidate for solar cell,fuel cell,battery,supercapacitor and so on.In this report,we have studied the effect of acetic acid pre-treatment on the growth temperature of graphene on copper by thermal chemical vapor deposition(CVD).In case of graphene growth without acetic acid pre-treatment,the high temperature of 1000 °C is needed for the growth of graphene by CVD.In contrast,the growth temperature can be decreased to 800 °C for graphene growth with acetic acid pre-treatment.We found that acetic acid pre-treatment can eliminate copper oxide from the sample surface resulting in the growth temperature of graphene decreases.
机译:Graphene是蜂窝状晶格中排列的碳原子的平面单层.Graphene具有高电子迁移率,优异的强度,透明度和极大的柔韧性等优异性质。这种异国情调使石墨烯成为太阳能电池,燃料电池,电池的有希望的候选者,超级电容器等。在本报告中,我们研究了醋酸预处理对石墨烯生长温度的影响通过热化学气相沉积(CVD)。石墨烯生长的情况下没有乙酸预处理的情况下,通过CVD的石墨烯生长需要1000℃的高温。在对比中,对于石墨烯生长,生长温度可以降低至800℃,用乙酸预处理。我们发现乙酸预处理可以消除铜从样品表面氧化物导致石墨烯的生长温度降低。

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