Two dimensional (2D) materials are attractive choices for field effect transistor channels because of the reduced source-drain “cross-talk” at very small spatial dimensions, that occurs because such materials are so thin.1 To date, experimental studies have mostly focused on graphene and the transition metal dichalcogenide (TMDC) materials with MX2 composition (M = Mo, W; X is a chalcogen), such as MoS2, MoSe2, WS2, and WSe2. The disadvantage with such materials is that in scaling down to 10 nm widths or less, edge scattering will become significant. Concern about edge scattering has attracted the attention of theorists2–7 and is now seen to be a major influence in experiment.8–11 To overcome this complication, the transition metal trichalcogenide (TMTC) family are attractive materials. In this talk, we will present the first experimental mapping of the electronic band structure of TiS3, which expected to have a band gap of about 1 eV and a mobility higher than 10,000 cm2/(V?sec).
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