The band structure of the quasi-one-dimensional layered semiconductor TiS_3(001)

摘要

The experimental mapping of the band structure of TiS3(001), by momentum resolution nanospot angle resolved photoemission, is presented. The experimental band structure, derived from angle-resolved photoemission, confirms that the top of the valence band is at the center of the Brillouin zone. This trichalcogenide has a rectangular surface Brillouin zone where the effective hole mass along the chain direction is -0.95 +/- 0.09m(e), while perpendicular to the chain direction, the magnitude of the effective hole mass is much lower at -0.37 +/- 0.1m(e). The placement of the valence band well below the Fermi level suggests that this is an n-type semiconductor. Published by AIP Publishing.