The electronic band structure of quasi-one-dimensional van der Waals semiconductors: the effective hole mass of ZrS3 compared to TiS3

摘要

The band structure of the quasi-one-dimensional transition metal trichalcogenide ZrS3(001) was investigated using nanospot angle resolved photoemission spectroscopy (nanoARPES) and shown to have many similarities with the band structure of TiS3(001). We find that ZrS3, like TiS3, is strongly n-type with the top of the valence band similar to 1.9 eV below the Fermi level, at the center of the surface Brillouin zone. The nanoARPES spectra indicate that the top of the valence band of the ZrS3(001) is located at Gamma over bar