Structural, electrical and optical properties of nanostructured ZrO_2 thin film deposited by SILAR method

摘要

Successive Ionic Layer Adsorption and Reaction (SILAR) method has been employed to deposit nanocrystalline ZrO_2 thin film of thickness 91 nm onto glass substrates using ZrOCl_2?8H_2O and NaOH as cationic and anionic precursors respectively. The structural and surface morphological characterizations have been carried out by means of X-ray diffraction and field emission scanning electron microscopy confirms the nanocrystalline nature of ZrO_2 thin film. The direct optical band gap and activation energy of the ZrO_2 thin film are found to be 4.74 and 0.80eV respectively.