High-voltage Large-current 4H-SiC JBS Diodes

摘要

3.3kV and 4.5kV 4H-SiC junction barrier Schottky (JBS) diodes with floating guard rings edge termination have been fabricated. The 3.3kV device with 33μm 2.7E15 cm~(-3) epilayer and 5.5×5.5mm~2 schottky contact area has a blocking voltage (V_b) of 3.9 kV and a specificon-resistance (Ron) of 10.5 mΩ.cm~2, with a forward current measured up to 50A at V_F=3.0V. The 4.5kV device with 50μm 1.2E15 cm~(-3) epilayer and 5.5×5.5mm~2 schottky contact area has a blocking voltage (V_b) of 5.1 kV and a specificon-resistance (Ron) of 22.9 mΩ·cm~2, with a forward current of 30A at V_F=3.7V.