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Experimental Study of High Performance 4H-SiC Floating Junction JBS Diodes

机译：高性能4H-SIC浮动结合JBS二极管的实验研究

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Hao Yuan; Chengsen Wang; Xiaoyan Tang; Qingwen Song; Yanjing He; Yimen Zhang; Yuming Zhang; Li Xiao; Liangyong Wang; Yong Wu;
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1. The analysis and characteristics of 4H-SiC floating junction JBS diodes with different structures underneath the termination region [J] . Yuan Hao, Tang Xiaoyan, Song Qingwen, Solid-State Electronics . 2019,第OCTa期

机译：终端区下方结构不同的4H-SiC浮结JBS二极管的分析和特性
2. The analysis and characteristics of 4H-SiC floating junction JBS diodes with different structures underneath the termination region [J] . Yuan Hao, Tang Xiaoyan, Song Qingwen, Solid-State Electronics . 2019,第Octa期

机译：终端区下方结构不同的4H-SiC浮结JBS二极管的分析和特性
3. Study of 4H-SiC Junction Barrier Schottky(JBS) Diode using various junction structures [J] . Ki Hyun Kim, Ye Hwan Kang, Jung Hun Lee, Materials science forum . 2016,第期

机译：利用各种结结构研究4H-SiC结型势垒肖特基（JBS）二极管
4. Dynamic Switching of 3kV 4H-SiC Charge-Balanced Junction Barrier Schottky (JBS) Diodes [C] . X. Zhou, C. Hitchcock, R. Ghandi, International Conference on Silicon Carbide and Related Materials . 2020

机译：3KV 4H-SIC充电平衡结屏肖特基（JBS）二极管动态切换
5. Growth and use of epitaxially grown erbium arsenide semimetal to enhance III-V Schottky diode and tunnel junction performance [D] . Zimmerman, Jeramy D. 2007

机译：外延生长的砷化semi半金属的生长和使用以增强III-V肖特基二极管和隧道结的性能
6. High-Performance Temperature Sensors Based on Dual 4H-SiC JBS and SBD Devices [O] . Seong-Ji Min, Myeong Cheol Shin, Ngoc Thi Nguyen, 2020

机译：基于双4H-SiC JBS和SBD器件的高性能温度传感器
7. Simulation and experimental study on the junction termination structure for high-voltage 4H-SiC PiN diodes [O] . Hiyoshi Toru, Hori Tsutomu, Suda Jun, 2008

机译：高压4H-SiC PiN二极管结终端结构的仿真和实验研究
8. Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (<250 V) 4H-SiC pn Junction Diodes - Part 1: DC Properties [R] . Neudeck, Philip G., Huang, Wei, Dudley, Michael 1999

机译：低压（＆lt; 250 V）4H-siC pn结二极管中体积和基本螺旋位错辅助反向击穿的研究 - 第1部分：直流特性

Experimental Study of High Performance 4H-SiC Floating Junction JBS Diodes

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