Study of power dissipation and delay of TWO dimensional SOI and SON based MOSFET inverter

摘要

High speed, small-size and low-power consuming devices and systems is the considerable solution for next generation technological solution. The search for new principle of operation of the small-size, high speed and low-power device is becoming more and more important. Hear we studied two dimensional SOI and SON Inverter in nano scale, as well as Power dissipation and Delay is being calculated. We also make a study on changing phenomena of power and delay in a SOI and SON MOSFET Inverter while varying doping concentration (Na), Gate length(Lz) Front Gate Oxide Thickness(Tgox} and Channel thickness(Tsi) To do our job well we considered Different short channel effects like drain induced barrier lowering, 2D charge sharing and fringing field effects under different structural and operational parameter variations