Modeling for contact resistance between metallic carbon nanotubes and semiconducting substrates of field emission devices

摘要

A Schottky Barrier would inevitably exist in Metal-Semiconductor contact, which will cause a contact resistance that effect emission current of field emission devices. A model of contact resistance between metallic carbon nanotubes (CNT) and doped semiconducting substrates is proposed in this paper to evaluate this effect. Besides, factors that impact this contact are discussed, which could be valuable for the design of CNT field emission devices.