Pulsed Laser Crystallization of Silicon Films Deposited by PECVD

摘要

Pulsed laser was demonstrated to be effective for the crystallization of amorphous hydrogenated silicon (a-Si:H) films deposited on Si wafer. The amorphous films were deposited on (111) Si wafers by plasma enhanced chemical vapor deposition (PECVD). The crystallization treatment was carried out by a low frequency Nd: YAG laser. The crystallinity modifications induced by the laser treatment were evidenced by X-ray diffraction and atomic force microscope (AFM). The influence of laser frequency on the crystallization degree was analyzed in detail. The better crystallinity was obtained at the laser frequency of 10Hz.