Method of controlling the film thickness uniformity of PECVD-deposited silicon-comprising thin films

摘要

A method which can be used to provide PECVD deposited silicon-comprising films of uniform thickness across large substrate surfaces, where the minimal dimension along an edge of the substrate or the minimum equivalent diameter is about 500 mm. Further, the uniform film can be produced under process conditions which provide a process window which enables easy control over the process. The method makes use of a combination of process steps where the individual process steps are easy to control and provide film profile repeatability over the substrate surface but do not provide film thickness uniformity over the substrate surface. The combination of process steps provide film thickness uniformity over the substrate surface.