Design and Analysis of Dual Direction SCR ESD Devices in 0.5μm 5V/18V CDMOS Technology

摘要

Two types of dual direction SCR (DDSCR) are designed based on a 0.5-μm 5V/18V CDMOS process and analyzed employ transmission line pulse (TLP) testing. Electrostatic discharge (ESD) stress in both the positive and negative directions on pins can be protected with those devices, which are quite suitable for 5V/18V integrated circuit ESD protection applications because they have the merits of a small trigger voltage, a small leakage current, a large holding voltage or a relatively bigger holding current, and a latch-up immunity. Measurement results show that, the ESD failure current for single-finger DDSCR devices with finger width of 50μm are all above 3.5A, which could withstand 4kV HBM ESD stress.