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Metal-Oxide-Semiconductor Devices on GaAs with High-k Dielectric and MOCVD Grown ZnO Interface Passivation Layer

机译：具有高k电介质和MOCVD种植ZnO接口钝化层的GaAs上的金属氧化物半导体器件

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《International Conference on Nanoscience, Technology and Societal Implications》|2011年||共6页
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Kundu Souvik; Banerji Pallab;
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1. Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer [J] . S. Koveshnikov, W. Tsai, I. Ok, Applied Physics Letters . 2006,第2期

机译：具有高k栅氧化层和非晶硅界面钝化层的GaAs上的金属氧化物半导体电容器
2. Role of ultra thin pseudomorphic InP layer to improve the high-k dielectric/GaAs interface in realizing metal-oxide-semiconductor capacitor [J] . Souvik Kundu, Nripendra N. Haider, D. Biswas, Journal of Applied Physics . 2012,第3期

机译：超薄伪非晶InP层在实现金属氧化物半导体电容器中改善高k介电/ GaAs界面的作用
3. Comparison of interfacial and electrical properties between Al_2O_3 and ZnO as interface passivation layer of GaAs MOS device with HfTiO gate dielectric [J] . Zhu Shuyan, Xu Jingping, Wang Lisheng, Journal of Semiconductors . 2015,第3期

机译：Al_2O_3与ZnO作为HfTiO栅介质的GaAs MOS器件界面钝化层的介电性能比较。
4. Metal-Oxide-Semiconductor Devices on GaAs with High-k Dielectric and MOCVD Grown ZnO Interface Passivation Layer [C] . Kundu Souvik, Banerji Pallab 2011 International Conference on Nanoscience, Technology and Societal Implications . 2011

机译：具有高k介电层和MOCVD生长的ZnO界面钝化层的GaAs上的金属氧化物半导体器件
5. III-V channel MOS devices with atomic-layer-deposited high-k dielectrics: Interface and carrier transport studies [D] . Shahrjerdi, Davood 2008

机译：具有原子层沉积的高k电介质的III-V沟道MOS器件：接口和载流子传输研究
6. Chemical characterization of extra layers at the interfaces in MOCVD InGaP/GaAs junctions by electron beam methods [O] . Cesare Frigeri, Alexey Aleksandrovich Shakhmin, Dmitry Anatolievich Vinokurov, 2011

机译：电子束法表征MOCVD InGaP / GaAs结中界面处多余层的化学性质
7. TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer [O] . Dennis Lin, B Xin-ping Qu, Yu-long Jiang, 2016

机译：采用GeOxNy钝化层的锗基金属氧化物半导体器件原子层沉积生长的TiO2 / HfO2双层栅堆叠
8. Interfaces in InAsSb/InGaAs strained-layer superlattices grown by MOCVD for use in infrared emitters [R] . Biefeld, R. M. , Follstaedt, D. M. , Kurtz, S. R. , 1995

机译：通过mOCVD生长的Inassb / InGaas应变层超晶格中的界面，用于红外发射器

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