ZnO film preparation by reactive sputtering method

摘要

In this paper, ZnO films were deposited on GaAs (100) substrate as the protective-coating and antireflection coating of semiconductor laser facets, in order to improve the lifetime and reliability. This study investigated the microstructure of ZnO films deposited on GaAs (100) substrate with different sputtering conditions containing RF power, pressure, etc. The optical thickness(nm) of ZnO films was λ/4=96nm, the transmittance was up to 90% at the wavelength of 808nm, and the refractive index n is 1.9. The surface morphology of ZnO films was uniform and smooth; it may be desirable for semiconductor facet film application.