采用直流反应磁控溅射方法,通过改变衬底温度并优化生长参数,在玻璃衬底上生长了In-N共掺p型ZnO薄膜.X射线衍射(XRD)测试表明,所得薄膜结晶性能良好,且具有很好的c轴择优取向.Hall测试的结果所得p型ZnO薄膜最低电阻率为35.6 Ω·cm,霍尔迁移率为0.111 cm2 ·V-1·s-1,空穴浓度为1.57×1018 cm-3.X光电子能谱(XPS)测试表明,铟元素已有效地掺入了ZnO薄膜中,且铟元素有效地促进了氮元素的掺入.紫外可见(UV)透射谱测试表明,在可见光范围内所有薄膜透光率均可达90%.%p-type ZnO thin films have been realized via co-doping of In and N by using dc reactive magnetron sputtering method. X-ray diffraction (XRD) measurement showed that all films possessed a good crystallinity with c-axis preferential orientation. The lowest reliable room-temperature resistivity was found to be 35.6 Ω·cm with carrier concentration of 1.57×1018 cm-3 and Hall mobility of 0.111 cm2·V-1·s-1. X-ray photo-electron spectroscopy confirms that In had been incorporated into the ZnO films effectively and the presence of In enhanced the incorporation of N. The transmittance spectrum revealed that the transmittance of all films was about 90% in the visible region.
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