Generation and Surface Modification of Si nano‐particles using SiH_4/H_2 and N_2 Multi‐hollow Discharges and their Application to the Third Generation Photovoltaics

摘要

We present production of surface nitridated silicon nano‐particle composite films for efficient multi exciton generation. Nitridation of silicon nano‐particles were produced using double multi‐hollow discharge plasma CVD, where generation of silicon nano‐particles and their nitridation were independently performed using SiH_4/H_2 and N_2 multi‐hollow discharge plasmas. We succeeded in controlling nitrogen contents in silicon nano‐particle composite films by varying flux of N radicals irradiated to silicon particles. We also observed strong photoluminescence emission centered at around 700 nm from the films. The PL signal may be attributed to the recombination of exciton confined in silicon nano‐p articles.