High-power InGaN LEDs: present status and future prospects

机译：高功率IngaN LED：现状和未来的前景

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The ThinGaN~R technology of OSRAM Opto semiconductors enables high power LEDs with wall plug efficiencies of currently up to 50%, enabling efficacies of > 100lm/W for white and green LEDs. The good scalability of the technology enables devices which deliver high luminous flux. The future limitations regarding efficacy of white LED can be estimated to be 150lm/W for high color rendering. Besides efficiency long term stability and high temperature capability are requirements for market adoption

机译：Osram Opto半导体的Thingan〜R技术使高功率LED具有当前高达50％的壁插效率，可实现白色和绿色LED的> 100LM / W的效率。该技术的良好可扩展性使得能够提供高光通量的设备。对于高色渲染，可以估计有关白色LED功效的未来限制为150lm / w。除了效率长期稳定性和高温能力之外是市场采用的要求

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《Conference on Light-Emitting Diodes: Research, Manufacturing, and Applications》|2008年||共2页
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B. Hahn; A. Weimar; M. Peter; J. Baur;
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正文语种
中图分类半导体二极管;
关键词
InGaN; white LED; high brightness;

机译：Ingan;白色LED;高亮度;

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High-power InGaN LEDs: present status and future prospects

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