High-power InGaN LEDs: present status and future prospects

机译：大功率InGaN LED：现状和未来展望

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The ThinGaN~R technology of OSRAM Opto semiconductors enables high power LEDs with wall plug efficiencies of currently up to 50%, enabling efficacies of > 100lm/W for white and green LEDs. The good scalability of the technology enables devices which deliver high luminous flux. The future limitations regarding efficacy of white LED can be estimated to be 150lm/W for high color rendering. Besides efficiency long term stability and high temperature capability are requirements for market adoption

机译：欧司朗光电半导体的ThinGaN〜R技术可实现高功率LED，其壁塞效率目前高达50％，从而使白色和绿色LED的效率> 100lm / W。该技术的良好可扩展性使设备能够提供高光通量。对于高显色性，未来关于白光LED功效的限制估计为150lm / W。除效率外，长期稳定性和高温能力也是市场采用的要求

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来源
《Conference on Light-Emitting Diodes: Research, Manufacturing, and Applications; 20080122-24; San Jose,CA(US)》|2008年|P.iviii|共2页
会议地点 San JoseCA(US)
作者
B. Hahn; A. Weimar; M. Peter; J. Baur;
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作者单位

OSRAM Opto Semiconductors, Leibnizstrasse 4, 93055 Regensburg, Germany;

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会议组织
原文格式 PDF
正文语种 eng
中图分类半导体二极管;
关键词
InGaN; white LED; high brightness;

机译：InGaN;白光LED;高亮度;

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High-power InGaN LEDs: present status and future prospects

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