Broadband Emission of GaAs/AlGaAs Quantum-Well Superluminescent Diode at 850 nm

摘要

We report the fabrication and characterization of broad emission linewidth GaAs/AlGaAs quantum-well based superluminescent diodes. A photon absorption section and an optical amplifier sections are monolithically integrated on the device to suppress feedback oscillation and to amplifier the optical power, respectively. The device emitters at 850 nm peak wavelength, and exhibits a broad bandwidth of 65 nm, output power > 3.5 mW, and a spectral ripple of 0.5 dB at 20°C under continuous wave operation.