Measurement of junction temperature and thermal resistance in InGaAlAs/AlGaAs quantum-well superluminescent diodes (SLDs)

摘要

This paper reports on the experimental method of the determination of junction temperature and thermal resistance in 840 nm InGaAlAs/AlGaAs compressive strained single quantum well (SQW) superluminescent diodes (SLDs). The linear relation between forward voltage and junction temperature clearly occurs by utilizing the forward voltage temperature (V-T) method. The temperature coefficient dV/dT has been determined. Under 100 mA continuous-wave (CW) operation condition, the thermal resistance is measured to be 81.6 degrees C/W, which is not significantly different with the theoretical calculation result.