Junction temperature measurement of GaN-based light-emitting diodes using temperature-dependent resistance

摘要

A simple and reliable method to determine the junction temperature of GaN-based light-emitting diodes (LEDs) is presented in this paper. The variation of resistance of doped GaN with temperature is advantageously used to measure junction temperature. A simple calibration relating to temperature and resistance is measured and shows excellent agreement with the model analysis. The junction temperature of the pulsed-driving LEDs is measured by resistance meter and shows good agreement with that by the forward voltage method. Experimental results obtained by the described method are presented and discussed. The temperature-dependent resistance method has potential to be a very useful alternative for measurement of temperature in electronic and optoelectronic devices.