机译:通过基于温度的测量研究InGaN / GaN基发光二极管中的非辐射复合机理
Department of Electronics and Communication Engineering, Hanyang University, ERICA Campus, Ansan, Gyeonggi-do 426-791, South Korea;
Department of Electronics and Communication Engineering, Hanyang University, ERICA Campus, Ansan, Gyeonggi-do 426-791, South Korea;
Department of Electronics and Communication Engineering, Hanyang University, ERICA Campus, Ansan, Gyeonggi-do 426-791, South Korea;
Department of Electronics and Communication Engineering, Hanyang University, ERICA Campus, Ansan, Gyeonggi-do 426-791, South Korea;
Department of Electronics and Communication Engineering, Hanyang University, ERICA Campus, Ansan, Gyeonggi-do 426-791, South Korea;
Department of Applied Physics and Department of Bionanotechnology, Hanyang University, ERICA Campus, Ansan, Gyeonggi-do 426-791, South Korea;
Department of Applied Physics and Electronics, Sangji University, Wonju, Gangwon-do 220-702, South Korea;
机译:非辐射复合机理及其对InGaN / GaN发光二极管器件性能的影响分析
机译:InGaN / GaN发光二极管中主要非辐射机制随电流变化的研究
机译:硅上基于GaN的纳米线白光发光二极管中与温度相关的非辐射复合过程
机译:通过各种器件表征技术分析的InGaN / GaN发光二极管中的非辐射复合机理
机译:研究和优化GaN基发光二极管中的载流子传输,载流子分布和效率下降
机译:梯度铟成分p型InGaN层增强GaN基绿色发光二极管的量子效率
机译:非辐射复合-在选择InGaN / GaN发光二极管的量子阱数时至关重要