Fabrication and characteristics of high speed InGaAs/GaAs quantum-wells superluminescent diode emitting at 1053 nm

摘要

A high speed 1053 nm superluminescent diode (SLD) with a ridge-waveguide structure has been fabricated for the first time to the best of our knowledge. InGaAs/GaAs quantum well epitaxial structure, the etched depth of the insulation channel and the area of p-side electrode were optimized to enhance the modulation bandwidth of the SLD. Bend-waveguide unpumped absorbing region structure and facet coating methods have been adopted to suppress the lasing oscillation. As a result, a -3 dB cutoff frequency of 1.7 GHz is obtained at a dc bias current of 100 mA and 25 ℃ heat-sink temperature, corresponding to 2.5 mW output power from single-mode fiber with spectral modulation of less than 0.15 dB and spectral width of 24 nm. The SLD module shows a good reliability.