Electrochemical Synthesis of a ZnO Nanowire Field-Effect Transistor

摘要

Aluminum wires are electrochemically sculptured into bi-directional templates for the growth and contacting of nanowires as three terminal devices. The utility of this nanostructured micro-template is demonstrated by a ZnO nanowire surrounding gate field-effect transistor. This bottom-up approach to a 3-D nanowire transistor is unique in that it can be almost entirely fabricated in a beaker using aqueous, room-temperature electrochemistry.